Toshiba Electronic Components and Storage Corporation (" Toshiba ") today announced the introduction of the TK055U60Z1, manufactured with the latest generation process [1], further expanding the N-channel power MOSFET family. The device has a super junction structure and can withstand a voltage of 600V, which is suitable for data centers, switching power supplies and photovoltaic generator power regulators. The new product is the first 600V product in Toshiba's DTMOSVI family, and volume shipments begin today.

By optimizing the gate design and process, the 600V DTMOSVI series has reduced the drain-source on-resistance per unit area by approximately 13% and the drain-source on-resistance x gate leakage charge (a quality factor of MOSFET performance) by approximately 52% compared to Toshiba's current DTMOSIV-H series with the same drain-source voltage rating. This helps to ensure that the series achieves a double reduction in on-off loss and switching loss, and ultimately an increase in switching power supply efficiency.

The new product is in TOLL package and the gate drive is Kelvin connected. The high-speed switching performance of the MOSFET can be enhanced by reducing the influence of the source line inductance in the package, thereby suppressing oscillations during switching.

In the future, Toshiba will continue to expand the 600V DTMOSVI product line, as well as the released 650V DTMOSVI product line, and achieve energy savings by reducing the power loss of switching power supplies.

Figure 1: drain-source on-resistance compared to gate leakage charge


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- Data center (server switching power supply, etc.)

- Power regulator of photovoltaic generator

- Uninterruptible power supply system

peculiarity

- Low drain-source on-resistance x gate leakage charge, helping to improve the efficiency of switching power supplies